Influence of Silicon Crystal Orientation on Piezoelectric Textured Aluminium Nitride Deposited on Metal Electrodes

Publication type: 
Peer-reviewed journal article
Authors(Internal): 
All authors: 
Nathan Jackson
Theme: 
Microsystems
Abstract: 
There is a demand for enhancing the piezoelectric properties of aluminium nitride for MEMS applications. This paper investigates the crystallinity and piezoelectric properties of AlN and how they are affected by the crystal structure of the underlying layers. Stacks of metal/AlN were deposited on silicon wafers with different crystal orientations. Three different metals were used (Ti, Al, and Pt) as the bottom electrode in order to determine if the effects are dependent on a particular metal layer. The rocking-curve FWHM of AlN was decreased by approximately 32–35% when the metal/AlN layer was deposited on (111) Si compared to (100) Si, due to the reduced atomic mismatch. The increased (002) orientation of AlN significantly affected the piezoelectric properties resulting in a (d33) increase from 2.68 to 6.09 pm V−1 on Al, −5.01 to −6.31 pm V−1 on Ti, and −5.48 to −7.15 pm V−1 on Pt metal electrodes.
Date accepted: 
18/07/2016
Publication date: 
25/07/2016
Journal abbreviation: 
J VAC SCI TECHNOL B
Journal/Book title: 
Vacuum
Volume: 
132
Page start: 
47
Page end: 
52
URI: 
http://www.sciencedirect.com/science/article/pii/S0042207X16302639
Year: 
2016
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